I.Introduction

The Advanced Semiconductor Research Institute focuses on the global frontiers and major scientific challenges in the field of wide-bandgap semiconductors. Addressing China’s major strategic needs in fields such as information and energy, the Institute aims at building a domestically leading and world-class advanced research and development platform for cutting-edge technology and promote the in-depth development and integration of industry, university and research by making use of the leading industrial advantages of the Yangtze River Delta Region as well as the strong scientific research capabilities of Zhejiang University and the innovative system and mechanism of the ZJU-Hangzhou Global Scientific and Technological Innovation Center (HIC). The Institute was established by Academician YANG Deren, Chief Scientist of Hangzhou Science and Technology Innovation Center, with Academician ZHENG Youliao serving as the Director of the Academic Committee, Professor SHENG Kuang as the Director of the Institute. The Institute will primarily focus on building cleanroom laboratories as well as advanced R & D facilities and large instruments and equipment for the growth of wide bandgap semiconductor materials, development of chips, and semiconductor assembly, testing and application.

II. Key Research Areas

1. Wide bandgap semiconductor materials (including but limited to the following)

1.1 Growth of silicon carbide (SiC) single-crystals

1.2 Epitaxial growth of SiC thin films

1.3 Impurities and defects in SiC

1.4 Electrochemistry of SiC

1.5 Surface and interface of SiC

1.6 Novel prototype SiC device

1.7 Epitaxial growth of gallium nitride (GaN) thin films

1.8 Growth of single-crystal diamond semiconductors

    1.9 Growth of gallium oxide (Ga₂O₃) single crystals

1.10 Impurities and defects in Ga₂O₃

1.11 Crossover research of wide bandgap semiconductor materials and 2D materials

1.12 Equipment for the preparation and processing of wide band gap semiconductor materials

2. Wide bandgap semiconductor devices (including but not limited to the following)

2.1 SiC power devices

2.2 GaN power devices

2.3 Ga₂O₃ power devices

2.4 Other wide bandgap power devices

2.5 Single-chip integrated technology

2.6 Multi-chip integrated technology

2.7 Chip cooling technology

2.8 RF power chip technology

2.9 Energy harvesting technologies

2.10 Wide bandgap sensor chips

2.11 Other wide bandgap technologies

3. Assembly and testing (including but not limited to the following)

3.1 Assembly and testing of power devices

3.2 Assembly and testing of RF devices

3.3 Assembly and testing of other related devices

3.4 Module integration

3.5 Testing and application technologies

III. Application Requirements

1. Have a Ph.D. degree awarded within the last three years, with good moral, physical and mental health, and under 35 years old (in principle, but exceptions for age may apply for outstanding candidates);

2. Full-time engagement in postdoctoral research;

3. Priorities will be given to the applicants with background and experience in physics, materials, microelectronics, electrical engineering, chemistry and in interdisciplinary studies.

4. Good sense of teamwork and strong capacity of working independently;

5. Have good English listening, speaking, reading and writing skills;

6. Priorities will be given to the applicants who have published more than one paper of impact as the first author in the past three years, and with outstanding research results.

IV. Benefits and Support

1. Annual pre-tax salary, in principle, is no less than RMB 400,000 yuan (including local government talent subsidy), and it can be discussed individually.

2. For those who go on to work in the HIC after the completion of postdoctoral studies, they can simultaneously enjoy the corresponding talent policies of Hangzhou and Xiaoshan District;

3. Matching grants from Hangzhou and Xiaoshan District for those who have obtained funding from China Postdoctoral Science Foundation and Postdoctoral Research Projects of Zhejiang Province.

4. Provided with talent apartments of Xiaoshan District or those of the HIC;

5. Provided with first-class experiment and research conditions;

6. Additional funding or allowances for those who participate in major research projects and achieve remarkable results at the HIC;

7. Those who meet the conditions can apply for senior professional and technical positions of the HIC during their postdoc studies;

8. Those who have excellent performance and results during their postdoc studies can be recommended to apply for teaching positions in Zhejiang University or technical R & D positions at the HIC.

9. The HIC may assist those who meet the relevant regulations of Hangzhou to apply for the collective household registration of Hangzhou.

V. Application Documents

1. Application Form for the Postdoctoral Fellow at ZJU-Hangzhou Global Science and Technology Innovation Center.doc

2. Attach any supporting documents (e.g. awards, appraisals, projects and academic papers) showing research competency and academic achievements with the application;

The applicant shall send the electronic version of the above materials to hic@zju.edu.cn. The subject and attachment shall be labeled in the format: “Wide Bandgap Semiconductor Materials and Devices Platform + Postdoctoral Fellow + Full Name”.