1)Yang Y, Li K, Tong Z, et al. The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC[J]. Journal of Applied Physics, 2024, 136(4).
2)Yang Y, Tong Z, Pi X, et al. Advances and challenges in 4H silicon carbide: defects and impurities[J]. Physica Scripta, 2024.
3)Huang Y, Jiang X, Deng T, et al. Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics[J]. Journal of Applied Physics, 2024, 135(13).
4)Huang Y, Wang R, Yang D, et al. Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels[J]. Journal of Applied Physics, 2024, 135(19).
5)Wang R, Huang Y, Yang D, et al. Impurities and defects in 4H silicon carbide[J]. Applied Physics Letters, 2023, 122(18).
6)Huang Y, Wang R, Zhang Y, et al. Compensation of p-type doping in Al-doped 4H-SiC[J]. Journal of Applied Physics, 2022, 131(18).
7)Huang Y, Qian Y, Zhang Y, et al. Kick-out diffusion of Al in 4H-SiC: an ab initio study[J]. Journal of Applied Physics, 2022, 132(1).
8)Huang Y, Wang R, Qian Y, et al. Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements[J]. Chinese Physics B, 2022, 31(4): 046104.
9)Huang Y, Wang R, Zhang Y, et al. Assessing the effect of hydrogen on the electronic properties of 4H-SiC[J]. Chinese Physics B, 2022, 31(5): 056108.
1)Yang Y, Li K, Tong Z, et al. The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC[J]. Journal of Applied Physics, 2024, 136(4).
2)Yang Y, Tong Z, Pi X, et al. Advances and challenges in 4H silicon carbide: defects and impurities[J]. Physica Scripta, 2024.
3)Huang Y, Jiang X, Deng T, et al. Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics[J]. Journal of Applied Physics, 2024, 135(13).
4)Huang Y, Wang R, Yang D, et al. Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels[J]. Journal of Applied Physics, 2024, 135(19).
5)Wang R, Huang Y, Yang D, et al. Impurities and defects in 4H silicon carbide[J]. Applied Physics Letters, 2023, 122(18).
6)Huang Y, Wang R, Zhang Y, et al. Compensation of p-type doping in Al-doped 4H-SiC[J]. Journal of Applied Physics, 2022, 131(18).
7)Huang Y, Qian Y, Zhang Y, et al. Kick-out diffusion of Al in 4H-SiC: an ab initio study[J]. Journal of Applied Physics, 2022, 132(1).
8)Huang Y, Wang R, Qian Y, et al. Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements[J]. Chinese Physics B, 2022, 31(4): 046104.
9)Huang Y, Wang R, Zhang Y, et al. Assessing the effect of hydrogen on the electronic properties of 4H-SiC[J]. Chinese Physics B, 2022, 31(5): 056108.