近3年5篇代表作(Selected five papers in recent three years)：
l Xin He, Yinchang Ma, Chenhui Zhang, Aiping Fu, Weijin Hu, Yang Xu, Bin Yu, Kai Liu, Hua Wang*, Xixiang Zhang*, and Fei Xue*, Proton-mediated reversible switching of multiple metastable ferroelectric phases with low operation voltages, Science Advances, 2023, 9, eadg4561.(Highlighted by Phys.Org., AAAS EurekAlert!, ScienMag, et al.)
l Yinchang Ma+, Yuan Yan+, Linqu Luo+, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue*, and Xixiang Zhang*, High-performancevan der Waals antiferroelectric CuCrP2S6-based memristors, Nature Communications, 2023, 14, 7891. (Editor’s Highlights)
l Fei Xue+*, Yinchang Ma+, Hua Wang+, Linqu Luo, Yang Xu, Thomas D Anthopoulos, Mario Lanza, Bin Yu* and Xixiang Zhang*, Two-dimensional ferroelectricity and antiferroelectricity for new computing paradigms, Matter 2022, 5, 1999. (Review paper)
l Fei Xue+*, Xin He+, Yinchang Ma+, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, and Xixiang Zhang*, Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions, Nature Communications 2021, 12, 7291.
l Fei Xue+, Xin He+, Zhenyu Wang, Jose Ramon Duran Retamal, Zheng Chai, Lingling Jing, Chenhui Zhang, Hui Fang, Yang Chai, Tao Jiang, Weidong Zhang, Husam N Alshareef, Zhigang Ji, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Giant ferroelectric resistance switching controlled by a modulatory terminal for low power neuromorphic in-memory computing, Advanced Materials 2021, 33, 2008709.
代表性文章列表(Selected papers)：
1. Qi Sun+, Xuefan Zhou+, Xiaochi Liu, Yahua Yuan,1 Linfeng Sun, Ding Wang, Fei Xue*, Hang Luo*, Dou Zhang, and Jian Sun*,Quasi-zero-dimensional ferroelectric polarization charges-coupled resistance switching with high-current density in ultrascaled semiconductors,Nano Letters 2024 In press.
2. Yinchang Ma+, Yuan Yan+, Linqu Luo+, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Jefferson Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue*, and Xixiang Zhang*, High-performancevan der Waals antiferroelectric CuCrP2S6-based memristors, Nature Communications, 2023, 14, 7891. (Editor’s Highlights)
3. Xin He, Yinchang Ma, Chenhui Zhang, Aiping Fu, Weijin Hu, Yang Xu, Bin Yu, Kai Liu, Hua Wang*, Xixiang Zhang*, and Fei Xue*, Proton-mediated reversible switching of multiple metastable ferroelectric phases with low operation voltages, Science Advances, 2023, 9, eadg4561.(Highlighted by Phys.Org., AAAS EurekAlert!, ScienMag, et al.)
4. Fei Xue+*, Chenhui Zhang+, Yinchang Ma, Yan Wen, Xin He, Bin Yu, and Xixiang Zhang*, Integrated memory devices based on two-dimensional materials, Advanced Materials2022, 34, 2201880 (Invited review).
5. Fei Xue+*, Yinchang Ma+, Hua Wang+, Linqu Luo, Yang Xu, Thomas D Anthopoulos, Mario Lanza, Bin Yu* and Xixiang Zhang*, Two-dimensional ferroelectricity and antiferroelectricity for new computing paradigms, Matter 2022, 5, 1999. (Review paper)
6. Fei Xue+*, Xin He+, Yinchang Ma+, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, and Xixiang Zhang*, Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions, Nature Communications 2021, 12, 7291.
7. Fei Xue+, Xin He+, Zhenyu Wang, Jose Ramon Duran Retamal, Zheng Chai, Lingling Jing, Chenhui Zhang, Hui Fang, Yang Chai, Tao Jiang, Weidong Zhang, Husam N Alshareef, Zhigang Ji, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Giant ferroelectric resistance switching controlled by a modulatory terminal for low power neuromorphic in-memory computing, Advanced Materials 2021, 33, 2008709.
8. Fei Xue*, Jr-Hau He*, Xixiang Zhang*, Emerging van der Waals ferroelectrics: Unique properties and novel devices, Applied Physics Reviews 2021, 8, 021316. (Review paper)
9. Fei Xue+,Xin He+, Wenhao Liu, Dharmaraj Periyanagounder, Chenhui Zhang, Mingguang Chen, Chun‐Ho Lin, Linqu Luo, Emre Yengel, Vincent Tung, Thomas D Anthopoulos, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Optoelectronic ferroelectric domain-wall memories made from a van der Waals ferroelectric, Advanced Functional Materials 2020, 30, 2004206.
10. Fei Xue+, Xin He+, José Ramón Durán Retamal, Ali Han, Junwei Zhang, Zhixiong Liu, Jing-Kai Huang, Weijin Hu, Vincent Tung, Jr-Hau He*, Lain-Jong Li* and Xixiang Zhang*, Gate-tunable and multidirection-switchable memristive phenomena in a van der Waals ferroelectric, Advanced Materials 2019, 31,1901300. (Google citation: 131)
11. Fei Xue+*, Weijin Hu+, Ko-Chun Lee+, Li-Syuan Lu, Junwei Zhang, Hao-Ling Tang, Ali Han, Wei-Ting Hsu, Shaobo Tu, Wen-Hao Chang, Chen-Hsin Lien, Jr-Hau He, Zhidong Zhang, Lain-Jong Li* and Xixiang Zhang*, Room-temperature ferroelectricity in hexagonally α-In2Se3 down to the monolayer limit, Advanced Functional Materials 2018, 28, 1803738. (Google citation: 256)
12. Fei Xue+, Junwei Zhang+, Weijin Hu, Wei-Ting Hsu, Ali Han, Siu-Fung Leung, Jing-Kai Huang, Yi Wan, Shuhai Liu, Junli Zhang, Jr-Hau He, Wen-Hao Chang, Zhong Lin Wang, Xixiang Zhang*, Lain-Jong Li*, Multidirection piezoelectricity in mono-and multilayered hexagonal α-In2Se3, ACS Nano 2018, 12, 4976. (Google citation: 232)
13. Chaojie Cui+, Fei Xue+, Weijin Hu, Lain-Jong Li. Two-dimensional materials with piezoelectric and ferroelectric functionalities, npj 2D Materials and Applications 2018, 2, 18. (Invited review; Google citation: 329)
14. Fei Xue, Libo Chen, Jian Chen, Jingbin Liu, Longfei Wang, Mengxiao Chen, Yaokun Pang, Xiaonian Yang, Guoyun Gao, Junyi Zhai*, Zhong Lin Wang*, P-type MoS2 and n-type ZnO diode and its performance enhancement by piezo-phototronic effect, Advanced Materials 2016, 28, 3391.(Google citation: 155)
15. Fei Xue+, Libo Chen+, Longfei Wang, Yaokun Pang, Jian Chen, Chi Zhang*, Zhong Lin Wang*, MoS2 tribotronic transistor for smart tactile switch, Advanced Functional Materials 2016, 26, 2104.
近3年5篇代表作(Selected five papers in recent three years)：
l Xin He, Yinchang Ma, Chenhui Zhang, Aiping Fu, Weijin Hu, Yang Xu, Bin Yu, Kai Liu, Hua Wang*, Xixiang Zhang*, and Fei Xue*, Proton-mediated reversible switching of multiple metastable ferroelectric phases with low operation voltages, Science Advances, 2023, 9, eadg4561.(Highlighted by Phys.Org., AAAS EurekAlert!, ScienMag, et al.)
l Yinchang Ma+, Yuan Yan+, Linqu Luo+, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue*, and Xixiang Zhang*, High-performancevan der Waals antiferroelectric CuCrP2S6-based memristors, Nature Communications, 2023, 14, 7891. (Editor’s Highlights)
l Fei Xue+*, Yinchang Ma+, Hua Wang+, Linqu Luo, Yang Xu, Thomas D Anthopoulos, Mario Lanza, Bin Yu* and Xixiang Zhang*, Two-dimensional ferroelectricity and antiferroelectricity for new computing paradigms, Matter 2022, 5, 1999. (Review paper)
l Fei Xue+*, Xin He+, Yinchang Ma+, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, and Xixiang Zhang*, Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions, Nature Communications 2021, 12, 7291.
l Fei Xue+, Xin He+, Zhenyu Wang, Jose Ramon Duran Retamal, Zheng Chai, Lingling Jing, Chenhui Zhang, Hui Fang, Yang Chai, Tao Jiang, Weidong Zhang, Husam N Alshareef, Zhigang Ji, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Giant ferroelectric resistance switching controlled by a modulatory terminal for low power neuromorphic in-memory computing, Advanced Materials 2021, 33, 2008709.
代表性文章列表(Selected papers)：
1. Qi Sun+, Xuefan Zhou+, Xiaochi Liu, Yahua Yuan,1 Linfeng Sun, Ding Wang, Fei Xue*, Hang Luo*, Dou Zhang, and Jian Sun*,Quasi-zero-dimensional ferroelectric polarization charges-coupled resistance switching with high-current density in ultrascaled semiconductors,Nano Letters 2024 In press.
2. Yinchang Ma+, Yuan Yan+, Linqu Luo+, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Jefferson Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue*, and Xixiang Zhang*, High-performancevan der Waals antiferroelectric CuCrP2S6-based memristors, Nature Communications, 2023, 14, 7891. (Editor’s Highlights)
3. Xin He, Yinchang Ma, Chenhui Zhang, Aiping Fu, Weijin Hu, Yang Xu, Bin Yu, Kai Liu, Hua Wang*, Xixiang Zhang*, and Fei Xue*, Proton-mediated reversible switching of multiple metastable ferroelectric phases with low operation voltages, Science Advances, 2023, 9, eadg4561.(Highlighted by Phys.Org., AAAS EurekAlert!, ScienMag, et al.)
4. Fei Xue+*, Chenhui Zhang+, Yinchang Ma, Yan Wen, Xin He, Bin Yu, and Xixiang Zhang*, Integrated memory devices based on two-dimensional materials, Advanced Materials2022, 34, 2201880 (Invited review).
5. Fei Xue+*, Yinchang Ma+, Hua Wang+, Linqu Luo, Yang Xu, Thomas D Anthopoulos, Mario Lanza, Bin Yu* and Xixiang Zhang*, Two-dimensional ferroelectricity and antiferroelectricity for new computing paradigms, Matter 2022, 5, 1999. (Review paper)
6. Fei Xue+*, Xin He+, Yinchang Ma+, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, and Xixiang Zhang*, Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions, Nature Communications 2021, 12, 7291.
7. Fei Xue+, Xin He+, Zhenyu Wang, Jose Ramon Duran Retamal, Zheng Chai, Lingling Jing, Chenhui Zhang, Hui Fang, Yang Chai, Tao Jiang, Weidong Zhang, Husam N Alshareef, Zhigang Ji, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Giant ferroelectric resistance switching controlled by a modulatory terminal for low power neuromorphic in-memory computing, Advanced Materials 2021, 33, 2008709.
8. Fei Xue*, Jr-Hau He*, Xixiang Zhang*, Emerging van der Waals ferroelectrics: Unique properties and novel devices, Applied Physics Reviews 2021, 8, 021316. (Review paper)
9. Fei Xue+,Xin He+, Wenhao Liu, Dharmaraj Periyanagounder, Chenhui Zhang, Mingguang Chen, Chun‐Ho Lin, Linqu Luo, Emre Yengel, Vincent Tung, Thomas D Anthopoulos, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Optoelectronic ferroelectric domain-wall memories made from a van der Waals ferroelectric, Advanced Functional Materials 2020, 30, 2004206.
10. Fei Xue+, Xin He+, José Ramón Durán Retamal, Ali Han, Junwei Zhang, Zhixiong Liu, Jing-Kai Huang, Weijin Hu, Vincent Tung, Jr-Hau He*, Lain-Jong Li* and Xixiang Zhang*, Gate-tunable and multidirection-switchable memristive phenomena in a van der Waals ferroelectric, Advanced Materials 2019, 31,1901300. (Google citation: 131)
11. Fei Xue+*, Weijin Hu+, Ko-Chun Lee+, Li-Syuan Lu, Junwei Zhang, Hao-Ling Tang, Ali Han, Wei-Ting Hsu, Shaobo Tu, Wen-Hao Chang, Chen-Hsin Lien, Jr-Hau He, Zhidong Zhang, Lain-Jong Li* and Xixiang Zhang*, Room-temperature ferroelectricity in hexagonally α-In2Se3 down to the monolayer limit, Advanced Functional Materials 2018, 28, 1803738. (Google citation: 256)
12. Fei Xue+, Junwei Zhang+, Weijin Hu, Wei-Ting Hsu, Ali Han, Siu-Fung Leung, Jing-Kai Huang, Yi Wan, Shuhai Liu, Junli Zhang, Jr-Hau He, Wen-Hao Chang, Zhong Lin Wang, Xixiang Zhang*, Lain-Jong Li*, Multidirection piezoelectricity in mono-and multilayered hexagonal α-In2Se3, ACS Nano 2018, 12, 4976. (Google citation: 232)
13. Chaojie Cui+, Fei Xue+, Weijin Hu, Lain-Jong Li. Two-dimensional materials with piezoelectric and ferroelectric functionalities, npj 2D Materials and Applications 2018, 2, 18. (Invited review; Google citation: 329)
14. Fei Xue, Libo Chen, Jian Chen, Jingbin Liu, Longfei Wang, Mengxiao Chen, Yaokun Pang, Xiaonian Yang, Guoyun Gao, Junyi Zhai*, Zhong Lin Wang*, P-type MoS2 and n-type ZnO diode and its performance enhancement by piezo-phototronic effect, Advanced Materials 2016, 28, 3391.(Google citation: 155)
15. Fei Xue+, Libo Chen+, Longfei Wang, Yaokun Pang, Jian Chen, Chi Zhang*, Zhong Lin Wang*, MoS2 tribotronic transistor for smart tactile switch, Advanced Functional Materials 2016, 26, 2104.
