个人介绍

薛飞，浙江大学杭州国际科创中心科创百人研究员(求是科创学者)，浙江大学微纳电子学院兼职研究员。2011年获中国地质大学（北京）学士学位；2017年获中国科学院大学博士学位，导师王中林院士；2017年到2021年任沙特阿卜杜拉国王科技大学博士后，导师先后为李连忠（Lance Li）教授和张西祥教授。

研究方向为新型铁电存储器件的机理、设计、性能优化及集成。近几年在Nature Electronics等国内外著名杂志上发表文章30多篇，其中第一或通讯作者论文包括Science Advances、Nature Communications (2篇)、Matter、Advanced Materials (4篇)、Advanced Functional Materials (3篇)、Nano Letters、ACS Nano (2篇)、IEEE-TED等，单篇引用超200次的一作论文3篇。获授权中国专利7项。担任微电子领域知名期刊Microelectronic Engineering (爱思唯尔集团) 副主编。

Dr. Fei Xue is now a principal investigator in Hangzhou global innovation center, Zhejiang University, China. He received BS from China University of Geoscience (Beijing) in 2011, and Ph.D from University of China Academy of Sciences in 2017. Afterwards, from 2017 to 2021 he worked as a postdoctoral fellow at the King Abdullah University of Science and Technology.

His research focuses on low-dimensional ferroelectric materials and devices, neuromorphic computing and sensing, and piezotronics. He has published over 30 peer-reviewed papers in prestigious journals such as Nature Electronics, among which the first/correspondence authorship papers include Science Advances, Nature Communications (×2), Matter, Advanced Materials (×4), Advanced Functional Materials (×3), Nano Letters, ACS Nano (×2), etc. He has been granted with 7 Chinese patents. He is an associate editor of Microelectronic Engineering (Elsevier).

近3年5篇代表作(Selected five papers in recent three years)：

l  Xin He, Yinchang Ma, Chenhui Zhang, Aiping Fu, Weijin Hu, Yang Xu, Bin Yu, Kai Liu, Hua Wang*, Xixiang Zhang*, and Fei Xue*, Proton-mediated reversible switching of multiple metastable ferroelectric phases with low operation voltages, Science Advances, 2023, 9, eadg4561.(Highlighted by Phys.Org., AAAS EurekAlert!, ScienMag, et al.)

l  Yinchang Ma+, Yuan Yan+, Linqu Luo+, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue*, and Xixiang Zhang*, High-performancevan der Waals antiferroelectric CuCrP₂S₆-based memristors, Nature Communications, 2023, 14, 7891. (Editor’s Highlights)

l  Fei Xue+*, Yinchang Ma+, Hua Wang+, Linqu Luo, Yang Xu, Thomas D Anthopoulos, Mario Lanza, Bin Yu* and Xixiang Zhang*, Two-dimensional ferroelectricity and antiferroelectricity for new computing paradigms, Matter 2022, 5, 1999. (Review paper)

l  Fei Xue+*, Xin He+, Yinchang Ma+, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, and Xixiang Zhang*, Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions, Nature Communications 2021, 12, 7291.

l  Fei Xue+, Xin He+, Zhenyu Wang, Jose Ramon Duran Retamal, Zheng Chai, Lingling Jing, Chenhui Zhang, Hui Fang, Yang Chai, Tao Jiang, Weidong Zhang, Husam N Alshareef, Zhigang Ji, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Giant ferroelectric resistance switching controlled by a modulatory terminal for low power neuromorphic in-memory computing, Advanced Materials 2021, 33, 2008709.

代表性文章列表(Selected papers)：

1.         Qi Sun+, Xuefan Zhou+, Xiaochi Liu, Yahua Yuan,1 Linfeng Sun, Ding Wang, Fei Xue*, Hang Luo*, Dou Zhang, and Jian Sun*,Quasi-zero-dimensional ferroelectric polarization charges-coupled resistance switching with high-current density in ultrascaled semiconductors,Nano Letters 2024 In press.

2.         Yinchang Ma+, Yuan Yan+, Linqu Luo+, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Jefferson Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue*, and Xixiang Zhang*, High-performancevan der Waals antiferroelectric CuCrP₂S₆-based memristors, Nature Communications, 2023, 14, 7891. (Editor’s Highlights)

3.         Xin He, Yinchang Ma, Chenhui Zhang, Aiping Fu, Weijin Hu, Yang Xu, Bin Yu, Kai Liu, Hua Wang*, Xixiang Zhang*, and Fei Xue*, Proton-mediated reversible switching of multiple metastable ferroelectric phases with low operation voltages, Science Advances, 2023, 9, eadg4561.(Highlighted by Phys.Org., AAAS EurekAlert!, ScienMag, et al.)

4.         Fei Xue+*, Chenhui Zhang+, Yinchang Ma, Yan Wen, Xin He, Bin Yu, and Xixiang Zhang*, Integrated memory devices based on two-dimensional materials, Advanced Materials2022, 34, 2201880 (Invited review).

5.         Fei Xue+*, Yinchang Ma+, Hua Wang+, Linqu Luo, Yang Xu, Thomas D Anthopoulos, Mario Lanza, Bin Yu* and Xixiang Zhang*, Two-dimensional ferroelectricity and antiferroelectricity for new computing paradigms, Matter 2022, 5, 1999. (Review paper)

6.         Fei Xue+*, Xin He+, Yinchang Ma+, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, and Xixiang Zhang*, Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions, Nature Communications 2021, 12, 7291.

7.         Fei Xue+, Xin He+, Zhenyu Wang, Jose Ramon Duran Retamal, Zheng Chai, Lingling Jing, Chenhui Zhang, Hui Fang, Yang Chai, Tao Jiang, Weidong Zhang, Husam N Alshareef, Zhigang Ji, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Giant ferroelectric resistance switching controlled by a modulatory terminal for low power neuromorphic in-memory computing, Advanced Materials 2021, 33, 2008709.

8.         Fei Xue*, Jr-Hau He*, Xixiang Zhang*, Emerging van der Waals ferroelectrics: Unique properties and novel devices, Applied Physics Reviews 2021, 8, 021316. (Review paper)

9.         Fei Xue+,Xin He+, Wenhao Liu, Dharmaraj Periyanagounder, Chenhui Zhang, Mingguang Chen, Chun‐Ho Lin, Linqu Luo, Emre Yengel, Vincent Tung, Thomas D Anthopoulos, Lain-Jong Li*, Jr-Hau He*, Xixiang Zhang*, Optoelectronic ferroelectric domain-wall memories made from a van der Waals ferroelectric, Advanced Functional Materials 2020, 30, 2004206.

10.     Fei Xue+, Xin He+, José Ramón Durán Retamal, Ali Han, Junwei Zhang, Zhixiong Liu, Jing-Kai Huang, Weijin Hu, Vincent Tung, Jr-Hau He*, Lain-Jong Li* and Xixiang Zhang*, Gate-tunable and multidirection-switchable memristive phenomena in a van der Waals ferroelectric, Advanced Materials 2019, 31,1901300. (Google citation: 131)

11.     Fei Xue+*, Weijin Hu+, Ko-Chun Lee+, Li-Syuan Lu, Junwei Zhang, Hao-Ling Tang, Ali Han, Wei-Ting Hsu, Shaobo Tu, Wen-Hao Chang, Chen-Hsin Lien, Jr-Hau He, Zhidong Zhang, Lain-Jong Li* and Xixiang Zhang*, Room-temperature ferroelectricity in hexagonally α-In₂Se₃ down to the monolayer limit, Advanced Functional Materials 2018, 28, 1803738. (Google citation: 256)

12.     Fei Xue+, Junwei Zhang+, Weijin Hu, Wei-Ting Hsu, Ali Han, Siu-Fung Leung, Jing-Kai Huang, Yi Wan, Shuhai Liu, Junli Zhang, Jr-Hau He, Wen-Hao Chang, Zhong Lin Wang, Xixiang Zhang*, Lain-Jong Li*, Multidirection piezoelectricity in mono-and multilayered hexagonal α-In₂Se₃, ACS Nano 2018, 12, 4976. (Google citation: 232)

13.     Chaojie Cui+, Fei Xue+, Weijin Hu, Lain-Jong Li. Two-dimensional materials with piezoelectric and ferroelectric functionalities, npj 2D Materials and Applications 2018, 2, 18. (Invited review; Google citation: 329)

14.     Fei Xue, Libo Chen, Jian Chen, Jingbin Liu, Longfei Wang, Mengxiao Chen, Yaokun Pang, Xiaonian Yang, Guoyun Gao, Junyi Zhai*, Zhong Lin Wang*, P-type MoS₂ and n-type ZnO diode and its performance enhancement by piezo-phototronic effect, Advanced Materials 2016, 28, 3391.(Google citation: 155)

15.     Fei Xue+, Libo Chen+, Longfei Wang, Yaokun Pang, Jian Chen, Chi Zhang*, Zhong Lin Wang*, MoS₂ tribotronic transistor for smart tactile switch, Advanced Functional Materials 2016, 26, 2104.

授权/公开专利 (Granted/filed Chinese patents)：

1.         薛飞，王丁, 王宝玉, 杨伟伟；铁电存储结构及其制造方法、铁电存储器件及调控方法，申请日2023-10-31，申请号2023114311861

2.         薛飞，王宝玉, 俞滨；铁电半导体器件、触觉传感存储器及触觉数据读写方法，授权日：2023-12-19，专利号：ZL 2023 1 1208196.9

3.         薛飞，何鑫，汪华；一种铁电半导体器件、制备方法以及实现多铁电相的方法，授权日：2023-04-14，专利号：ZL 2022 1 1546968.5

4.         薛飞，张丽敏，唐伟，张弛，杜伟明，王中林; 压电温度传感器, 授权日：2016-11-23, 专利号：ZL 201410128576.6

5.      张弛，薛飞，钟贤贷，王中林; 一种电磁驱动微型二维扫描镜器件及其封装结构, 授权日：2015-7-8, 专利号：ZL 201420181350。

6.         薛飞，潘曹峰，王中林; 一种自驱动照明装置, 授权日：2014-12-3, 专利号：ZL 201420181350 （实用新型专利）

7.         薛飞，潘曹峰，王中林; 一种废气处理系统，授权日：2014-9-17, 专利号：ZL 201420064774.6（实用新型专利）

团队求贤若渴，欢迎相关方向博士后、联培学生咨询，邮箱xuef@zju.edu.cn。