21. W. H. Geng, G. Yang, X. Q. Zhang, X. Zhang, Y. Z. Wang, L. H. Song, P. L. Chen, Y. Q. Zhang, X. D. Pi, * D. R. Yang, R. Wang, * Identification of subsurface damages of 4H-SiC wafers by combining photo chemical etching and molten alkali etching, Journal of Semiconductors.

20. Z. Jin, Y. Y. Liu, N. Xia,* X. W. Guo, Z. J. Hong, H. Zhang,* D. R. Yang, Wet etching in β-Ga₂O₃ bulk single crystal, CrystEngComm, 2022, 24, 1127. DOI: 10.1039/d1ce01499d.

19. X. S. Liu, J. R. Zhang, B. J. Xu, Y. H. Lu, Y. Q. Zhang, R. Wang,* D. L. Yang, X. D. Pi,* Deformation of 4H-SiC: the role of dopants, Applied Physics Letters, 2022, 120, 052105. DOI: 10.1063/5.0083882.

18. Y. C. Huang, R. Wang,* Y. Q. Zhang, D. L.Yang, X. D. Pi,*  Assessing the effect of H on the electronic properties of 4H-SiC, Chinese Physics B, 2022. DOI: 10.1088/1674-1056/ac4234.

17. Y. C. Huang, R. Wang,* Y. X. Qian, Y. Q. Zhang, D. L.Yang, X. D. Pi,* Theroretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group IVB elements, Chinese Physics B, 2022. DOI: 10.1088/1674-1056/ac20ca.

16. H. Luo, X. F. Han, Y. C. Huang, D. R. Yang, X. D. Pi,*   Numerical simulation of a novel method for PVT growth of SiC by adding a graphite block, Crystals, 2021, 11(12), 1581. DOI: 10.3390/cryst11121581.

15. K. Q. Li, Y. J. Cheng,* M. F. Dou, W. Zeng, S. Volz, S. Y. Xiong,* Tuning the anisotropic thermal transport in (110) silicon membranes with surface resonances, Nanomaterials, 2022, 12, 123. DOI: 10.3390/nano12010123.

14. S. Zhou,* S. C. Zhu, J. H. Guan, R. Wang, W. Zheng, P. Q. Gao,* X. H. Lu,* Confronting the air instability of cesium tin halide perovskites by metal ion incorporation, Journal of Physical Chemistry Letters, 2021, 12, 45, 10996-11004. DOI: 10.1021/acs.jpclett.1c03170.

13. Z. C. Hu, L. H. Song, D. H. Lin, Q. Y. He, X. J. Zhang, Y. M. Cai, L. X. Fang, S. He, W. C. Hsu, X. G. Yu,* D. R. Yang,* Carrier injection and annealing enhanced electrical performance in tunnel oxide passivated contact silicon solar cells, Physica Status Solidi A-Applications and Materials Science, 2021, 2100614. DOI: 10.1002/pssa.202100614.

12. L. H. Song,* Z. C. Hu, L. X. Fang, Y. M. Cai, S. He, H. Y. Huang, W. C. Hsu, X. G. Yu,* D. R. Yang, Performance improvement of gallium doped PERC solar cells by two-step bias application, Solar. RRL, 2021, 2100738. DOI: 10.1002/solr.202100738.

11. Y. F. Zheng, L. Huang, B. Y. Li, R. Wang, S. H. Wei,* Origin of the improved performance of Cu(In,Ga)(S,Se)₂ solar cells by postdeposition treatments: effect of band offsets, Physical Review Applied, 2021, 15, 064036. DOI: 10.1103/PhysRevApplied.15.064036.

10. M. Lan, R. Wang, Z. H. Yang, X. F. Wang, S. Sun, S. H. Wei,* Enhancing magnetic dipole emission in Eu-doped SrMO₃ (M=Ti,Zr,Hf): First-principles calculations, Physical Review B, 2021, 103, 245201. DOI: 10.1103/PhysRevB.103.245201.

9. P. J. Wang,* D. R. Yang, X. D. Pi,* Toward wafer-scale production of 2D transition metal chalcogenides, Advanced Electronic Materials, 2021, 2100278. DOI: 10.1002/aelm.202100278.

8. R. Wang, M. Lan, Y. F. Zheng, J. X. Yang, B. Y. Li, S. H. Wei,* Interface engineering of Cu(In,Ga)Se₂ solar cells by optimizing Cd- and Zn-chalcogenide alloys as the buffer layer, ACS Applied Materials and Interfaces, 2021, 13, 13, 15237-15245. Doi: 10.1021/acsami.1c00708.

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7. R. Wang,* J. X. Xu, S. Y. Zhang, Y. Zhang, P. H. Zheng, Z. Cheng, L. Zhang, F. X. Chen, X. D. Tong, Y. Zhang, W. Tan,* Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation, Journal of Materials Chemistry C, 2021, 9, 3177. DOI: 10.1039/d0tc05652a.

6. R. Wang, M. Lan, S. H. Wei,* Enhanced performance of Se-alloyed CdTe solar cells: The role of Se-segregation on the grain boundaries, Journal of Applied Physics, 2021, 129, 024501. DOI: 10.1063/5.0036701.

5. L. Zhang, R. Wang, Z. Liu, Z. Cheng, X. D. Tong, J. X. Xu, S. Y. Zhang, Y. Zhang,* F. X. Chen, Regulation of hole concentration and mobility and first-principle analysis of Mg-doping in InGaN grown by MOCVD, Materials, 2021, 14(18), 5339. DOI: 10.3390/ma14185339.

4. 张序清, 罗昊, 李佳君, 王蓉, 杨德仁, 皮孝东,* 半导体碳化硅湿法腐蚀工艺研究进展, 人工晶体学报, 2021. DOI: 10.16553/j.cnki.issn1000-985x.20211222.003.

3. 张玺, 王蓉, 张序清, 杨德仁, 皮孝东,* 碳化硅单晶衬底加工技术现状及发展趋势, 中央民族大学学报 （自然科学 版）, 2021, 30(4), 5-12.

2. 罗昊, 张序清, 杨德仁, 皮孝东,* 碳化硅单晶生长用高纯碳化硅粉体的研究进展, 人工晶体学报, 2021, 50(8), 1562-1574. 10.16553/j.cnki.issn1000-985x.20210707.001.

1. 开翠红, 王蓉, 杨德仁, 皮孝东,* 基于碳化硅衬底的宽禁带半导体外延, 人工晶体学报, 2021, 50(9), 1780-1795. DOI:10.16553/j.cnki.issn1000-985x.20210820.008.

王芸霞, 沈典宇, 杨德仁, 皮孝东,* 一种新型的真空系统冷阱结构, 真空学术会议, 2021.

卢慧, 王昊霖, 杨德仁, 皮孝东,* 半导体碳化硅表面重构的STM研究, 真空学术会议, 2021.